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to our customers, old company name in catalogs and other documents on april 1 st , 2010, nec electronics corporation merged with renesas technology corporation, and renesas electronics corporation took over all the business of both companies. therefore, although the old company name remains in this document, it is a valid renesas electronics document. we appreciate your understanding. renesas electronics website: http://www.renesas.com april 1 st , 2010 renesas electronics corporation issued by: renesas electronics corporation ( http://www.renesas.com ) send any inquiries to http://www.renesas.com/inquiry .
notice 1. all information included in this document is current as of th e date this document is issued. such information, however, is subject to change without any prior notice. before purchasing or using any renesas electronics products listed herein, please confirm the latest product information with a renesas electronics sales office. also, please pay regular and careful attention to additional and different information to be disclosed by renesas electronics such as that disclosed through our website. 2. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document . no license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property right s of renesas electronics or others. 3. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . 4. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. you should not use renesas electronics products or the technology de scribed in this document for any purpose re lating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or om issions from the information included herein. 7. renesas electronics products are classified according to the following three quality grades: ?standard?, ?high quality?, an d ?specific?. the recommended applications for each renesas electronics product depends on the product?s quality grade, as indicated below. you must check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application categorized as ?specific? without the prior written consent of renesas electronics. further, you may not use any renesas electronics product for any application for which it is not intended without the prior written consent of renesas electronics. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for a n application categorized as ?specific? or for which the product is not intended where you have failed to obtain the prior writte n consent of renesas electronics. the quality grade of each renesas electronics product is ?standard? unless otherwise expressly specified in a renesas electronics data sheets or data books, etc. ?standard?: computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. ?high quality?: transportation equipment (automobiles, trains, ship s, etc.); traffic control systems; anti-disaster systems; an ti- crime systems; safety equipment; and medical equipment not specifically designed for life support. ?specific?: aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions o r damages arising out of the use of renesas electronics products beyond such specified ranges. 9. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. fur ther, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatibility of each renesas electronics product. please use re nesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of c ontrolled substances, including without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. this document may not be reproduced or duplicated, in any fo rm, in whole or in part, without prior written consent of renes as electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this document or renesas electronics products, or if you have any other inquiries. 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regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
mar. 2002 type name voltage class 10.5 max 4.5 2.5 2.5 0.8 1.0 3.6 0.2 1.3 0.5 2.6 12.5 min 3.8 max 16 max 7.0 3.2 0.2 4.5 23 1 4 ? 24 1 3 1 2 3 4 t 1 terminal t 2 terminal gate terminal t 2 terminal ? measurement point of case temperature outline drawing dimensions in mm to-220 mitsubishi semiconductor ? triac ? bcr16cm medium power use non-insulated type, planar passivation type bcr16cm application contactless ac switches , light dimmer, electric flasher unit, hair drier, control of household equipment such as tv sets ?stereo ?refrigerator ?washing machine ?infrared kotatsu ?carpet ?electric fan, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications ? t (rms) ...................................................................... 16a ? drm ....................................................................... 600v ? fgt ! , i rgt ! , i rgt # ............................................ 20ma symbol v drm v dsm parameter repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 voltage class unit v v maximum ratings 12 600 720 symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight conditions commercial frequency, sine full wave 360 conduction, t c =100 c ? 3 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a 2 s w w v a c c g ratings 16 170 121 5.0 0.5 10 2 ?0 ~ +125 ?0 ~ +125 2.0 ? 1. gate open. refer to the page 6 as to the product guaranteed maximum junction temperature 150 c
mar. 2002 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c mitsubishi semiconductor ? triac ? bcr16cm medium power use non-insulated type, planar passivation type ? 2. measurement using the gate trigger characteristics measurement circuit. ? 3. case temperature is measured at the t2 terminal 1.5mm away from the molded case. ? 4. the contact thermal resistance r th (c-f) in case of greasing is 1.0 c/w. ? 5. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature t j =125 c 2. rate of decay of on-state commutating current (di/dt) c = 8.0a/ms 3. peak off-state voltage v d =400v symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =125 c, v drm applied t c =25 c, i tm =25a, instantaneous measurement t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c, v d =1/2v drm junction to case ? 3 ? 4 t j =125 c unit ma v v v v ma ma ma v c/w v/ s typ. ! @ # ! @ # electrical characteristics limits min. 0.2 10 max. 2.0 1.5 1.5 1.5 1.5 20 20 20 1.4 performance curves refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 4.40.4 1.2 2.4 3.20.8 1.6 2.0 2.8 3.6 4.0 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t j = 125 c t j = 25 c 10 0 23 5710 1 80 60 40 20 23 5710 2 44 100 120 140 160 180 200 0 maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) ? 5
mar. 2002 mitsubishi semiconductor ? triac ? bcr16cm medium power use non-insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 23 10 2 5710 3 1.6 0 23 10 1 5710 0 23 5710 1 23 5710 2 0.8 0.6 0.4 0.2 1.0 1.2 1.4 10 0 23 10 1 5710 2 23 5710 3 23 5710 4 3 2 10 1 7 5 3 2 7 5 7 5 3 2 10 1 v gd = 0.2v p gm = 5w p g(av) = 0.5w v gm = 10v v gt = 1.5v i gm = 2a i fgt i, i rgt i, i rgt iii 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 8 0 120 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 8 0 120 i fgt i, i rgt i i rgt iii 40 30 15 10 5 35 25 20 0 200 24 8 6 1012141618 40 12108 160 120 100 60 20 0 200 80 140 2 4 614 16 18 typical example typical example 360 conduction resistive, inductive loads curves apply regardless of conduction angle 360 conduction resistive, inductive loads maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( c/w) conduction time (cycles at 60hz) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) gate trigger voltage vs. junction temperature junction temperature ( c) 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c ) gate characteristics ( , ? and ?? )
mar. 2002 mitsubishi semiconductor ? triac ? bcr16cm medium power use non-insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 10 1 160 100 80 40 20 0 14040 40 60 20 0 2 0 60 80 140 100 120 60 120 14040 40 60 20 0 2 0 6 0 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 40 12108 160 120 100 60 20 0 200 80 140 2 4 614 16 18 60 60 t2.3 120 120 t2.3 100 100 t2.3 160 40 0 40 8 0 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 160 120 100 60 20 0 3.21.60 0.8 1.2 2.0 2.4 2.8 40 80 140 0.4 typical example typical example typical example laching current vs. junction temperature laching current (ma) junction temperature ( c) allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) repetitive peak off-state current vs. junction temperature junction temperature ( c) breakover voltage vs. junction temperature junction temperature ( c) holding current vs. junction temperature junction temperature ( c) all fins are black painted aluminum and greased natural convection t 2 + , g + t 2 , g ? ? ? typical example t 2 + , g typical example distribution natural convection no fins curves apply regardless of conduction angle resistive, inductive loads 100 (%) holding current ( t j = t c ) holding current ( t j = 25 c ) 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 c ) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c )
mar. 2002 mitsubishi semiconductor ? triac ? bcr16cm medium power use non-insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt iii i rgt i i fgt i 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 10 1 23 10 0 5710 1 23 5710 2 23 7 5 5 3 2 7 7 3 2 10 0 commutation characteristics critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) gate trigger current vs. gate current pulse width gate current pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) typical example typical example t j = 125 c i quadrant iii quadrant typical example t j = 125 c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c 6 ? 6 ? 6 ? 6v 6v 6v r g r g r g a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits
mar. 2002 type name voltage class 10.5 max 4.5 2.5 2.5 0.8 1.0 3.6 0.2 1.3 0.5 2.6 12.5 min 3.8 max 16 max 7.0 3.2 0.2 4.5 23 1 4 ? 24 1 3 1 2 3 4 t 1 terminal t 2 terminal gate terminal t 2 terminal ? measurement point of case temperature outline drawing dimensions in mm to-220 mitsubishi semiconductor ? triac ? bcr16cm medium power use non-insulated type, planar passivation type bcr16cm application contactless ac switches , light dimmer, electric flasher unit, hair drier, control of household equipment such as tv sets stereo refrigerator washing machine infrared kotatsu carpet electric fan, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications (warning) 1. refer to the recommended circuit values around the triac before using. 2. be sure to exchange the specification before using. if not exchanged, general triacs will be supplied. i t (rms) ...................................................................... 16a v drm ....................................................................... 600v i fgt ! , i rgt ! , i rgt # ............................................ 20ma symbol v drm v dsm parameter repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 voltage class unit v v maximum ratings 12 600 720 symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight conditions commercial frequency, sine full wave 360 conduction, t c =125 c ? 3 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a 2 s w w v a c c g ratings 16 170 121 5.0 0.5 10 2 40 ~ +150 40 ~ +150 2.0 ? 1. gate open. the product guaranteed maximum junction temperature 150 c (see warning.)
mar. 2002 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c mitsubishi semiconductor ? triac ? bcr16cm medium power use non-insulated type, planar passivation type ? 2. measurement using the gate trigger characteristics measurement circuit. ? 3. case temperature is measured at the t2 terminal 1.5mm away from the molded case. ? 4. the contact thermal resistance r th (c-f) in case of greasing is 1.0 c/w. ? 5. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature t j =125 c/150 c 2. rate of decay of on-state commutating current (di/dt) c = 8.0a/ms 3. peak off-state voltage v d =400v symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =150 c, v drm applied t c =25 c, i tm =25a, instantaneous measurement t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c/150 c, v d =1/2v drm junction to case ? 3 ? 4 t j =125 c/150 c unit ma v v v v ma ma ma v c/w v/ s typ. ! @ # ! @ # electrical characteristics limits min. 0.2/0.1 10/1 max. 2.0 1.5 1.5 1.5 1.5 20 20 20 1.4 performance curves the product guaranteed maximum junction temperature 150 c (see warning.) 0.5 1.0 3.01.5 2.0 2.5 3.5 4.0 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 10 0 23 5710 1 80 60 40 20 23 5710 2 44 100 120 140 160 180 200 0 t j = 150 c t j = 25 c maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) ? 5
mar. 2002 mitsubishi semiconductor ? triac ? bcr16cm medium power use non-insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) 23 10 2 5710 3 1.6 0 23 10 1 5710 0 23 5710 1 23 5710 2 0.8 0.6 0.4 0.2 1.0 1.2 1.4 10 0 23 10 1 5710 2 23 5710 3 23 5710 4 3 2 10 1 7 5 3 2 7 5 7 5 3 2 10 1 v gd = 0.1v p gm = 5w p g(av) = 0.5w v gm = 10v v gt = 1.5v i gm = 2a i fgt i, i rgt i, i rgt iii 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 160 4 4 40 0 40 80 120 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 160 4 4 40 0 40 80 120 i fgt i, i rgt i i rgt iii 40 30 15 10 5 35 25 20 0 200 24 8 6 1012141618 40 12108 160 120 100 60 20 0 200 80 140 2 4 614 16 18 typical example typical example 360 conduction resistive, inductive loads curves apply regardless of conduction angle 360 conduction resistive, inductive loads maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( c/w) conduction time (cycles at 60hz) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) gate trigger voltage vs. junction temperature junction temperature ( c) 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c ) gate characteristics ( , ? and ?? )
mar. 2002 mitsubishi semiconductor ? triac ? bcr16cm medium power use non-insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 160 4 4 40 0 4 0 80 120 10 1 160 100 80 40 20 0 14040 40 60 160 20 0 2 0 6 0 8 0 140 100 120 60 120 14016040 40 60 20 0 2 0 6 0 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 5 3 2 10 2 40 12108 160 120 100 60 20 0 200 80 140 2 4 614 16 18 60 60 t2.3 120 120 t2.3 100 100 t2.3 160 40 0 4 0 8 0 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 160 120 100 60 20 0 4.02.00 1.0 1.5 2.5 3.0 3.5 40 80 140 0.5 typical example typical example typical example laching current vs. junction temperature laching current (ma) junction temperature ( c) allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) repetitive peak off-state current vs. junction temperature junction temperature ( c) breakover voltage vs. junction temperature junction temperature ( c) holding current vs. junction temperature junction temperature ( c) all fins are black painted aluminum and greased natural convection t 2 + , g + t 2 , g ? ? ? typical example t 2 + , g typical example distribution 100 (%) holding current ( t j = t c ) holding current ( t j = 25 c ) 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 c ) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c ) natural convection no fins, curves apply regardless of conduction angle resistive, inductive loads curves apply regardless of conduction angle resistive, inductive loads
mar. 2002 mitsubishi semiconductor ? triac ? bcr16cm medium power use non-insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt iii i rgt i i fgt i 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 10 2 35710 1 2 3 23 5710 2 7 5 10 1 7 3 2 7 5 10 0 3 2 10 2 35710 1 2 3 23 5710 2 7 5 10 1 7 3 2 7 5 10 0 3 2 breakover voltage vs. rate of rise of off-state voltage (t j = 125 c) rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) gate trigger current vs. gate current pulse width gate current pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) typical example typical example t j = 125 c i quadrant iii quadrant breakover voltage vs. rate of rise of off-state voltage (t j = 150 c) rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) typical example t j = 150 c i quadrant iii quadrant commutation characteristics (t j = 150 c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) typical example t j = 150 c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c commutation characteristics (t j = 125 c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) typical example t j = 125 c i t = 4a = 500 s v d = 200v f = 3hz iii quadrant minimum charac- teristics value supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c i quadrant minimum charac- teristics value
mar. 2002 mitsubishi semiconductor ? triac ? bcr16cm medium power use non-insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) c 1 c 1 = 0.1~0.47 f r 1 = 47~100 ? c 0 = 0.1 f r 0 = 100 ? c 0 r 0 r 1 6 ? 6 ? 6 ? 6v 6v 6v r g r g r g a v a v a v load recommended circuit values around the triac test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits

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